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Automotive

Small Signal
Switching Diode
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SMD Rectifier Diode
Fast Recovery
Rectifier Diode
SMD Schottky Diode
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Suppressor
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digital transistor
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IGBT Automotive

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ESD Protection Diode
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Thyristor
Uni-directional Thyristor Bi-directional Thyristor

Automotive Protection
Diode
Transient Voltage
Suppressor ESD Protection Diode Power Zener Diode

Small Signal

Small Signal
Switching Diode
Small Signal
Schottky Diode
Small Signal Zener Diode
Small Signal
Transisitor
Small Signal
Digital Transisitor
Power Transistor

Automotive
Small Signal
Small Signal
Switching Diode Small Signal
Schottky Diode Small Signal Zener Diode Small Signal Transisitor Power Transistor Small Signal Digital
Transisitor

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Low & Medium Voltage
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NP MOSFET(12V-300V)
Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

SiC

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4/5″wafer

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6″wafer

TSBD Chip
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Integrated circuit

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TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode Back

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Introduction 1.Composed of two 300V ultrafast recovery diodes in series;
2.Internal insulation structure, the two chips have the same heat dissipation performance;
3.Suitable for continuous mode power factor correction and hard switching conditions of the booster diode;
4.The insulating ceramic sheet is placed in the product, and the heat sink is directly affixed, which saves the process of affixing the insulation gasket for the customer.

Features 1.Using flat FRED chip, Tj capacity can reach 175℃, which meets customers' high temperature application scenarios;
2.The reverse performance is excellent: the reverse charge QRR is small and the reverse power consumption is low, which meets the high frequency CCM working mode
3.With good VF and QRR compromise performance, can compete with SiC devices, so that you can choose a smaller heat sink.

SPECIFICATION

MURIS860UC

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